High voltage sensor device and method therefor
US7955943B2 · kind B2 · utility
6Cited by
16References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 30, 2009 |
| Grant date | Jun 7, 2011 |
| Priority date | — |
| Expiry date | Sep 30, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/209
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
In one embodiment, a high voltage element is formed overlying a doped semiconductor region that can be depleted during the operation of the high voltage element includes a conductor overlying a space in a resistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.