Nonvolatile memory device and method of fabricating the same
US7955960B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 21, 2008 |
| Grant date | Jun 7, 2011 |
| Priority date | — |
| Expiry date | Aug 11, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/69
Abstract
A nonvolatile memory device and a method of fabricating the same is provided to prevent charges stored in a charge trap layer from moving to neighboring memory cells. The method of fabricating a nonvolatile memory device, includes forming a first dielectric layer on a semiconductor substrate in which active regions are defined by isolation layers, forming a charge trap layer on the first dielectric layer, removing the first dielectric layer and the charge trap layer over the isolation layers, forming a second dielectric layer on the isolation layers including the charge trap layer, and forming a conductive layer on the second dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.