Method of manufacturing semiconductor device
US7955980B2 · kind B2 · utility
0Cited by
4References
7Claims
0Family size
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Key dates
| Filing date | Aug 18, 2009 |
| Grant date | Jun 7, 2011 |
| Priority date | — |
| Expiry date | Aug 18, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76883
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A post-CMP cleaning process of a copper layer is to be performed as follows. An alkaline aqueous solution, a polycarboxylic acid, BTA, and an alkaline aqueous solution are sequentially brought into contact with a primary surface of a silicon substrate over which the copper layer is provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.