Growth of planar reduced dislocation density M-plane gallium nitride by hydride vapor phase epitaxy

US7956360B2 · kind B2 · utility

Assignees

• The Regents of the University of California · US
• Japan Science and Technology Agency · JP

Inventors

• Benjamin A. Haskell · Lompoc, US
• Melvin McLaurin · Midland School, US
• Steven P. DenBaars · Goleta, US
• James S. Speck · Fremont, US
• Shuji Nakamura · Goleta, US

Key dates

• Filing date: Apr 6, 2007
• Grant date: Jun 7, 2011
• Expiry date: Apr 6, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02647
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of growing highly planar, fully transparent and specular m-plane gallium nitride (GaN) films. The method provides for a significant reduction in structural defect densities via a lateral overgrowth technique. High quality, uniform, thick m-plane GaN films are produced for use as substrates for polarization-free device growth.