Semiconductor storage element and manufacturing method thereof
US7956405B2 · kind B2 · utility
1Cited by
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21Claims
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Key dates
| Filing date | Mar 16, 2009 |
| Grant date | Jun 7, 2011 |
| Priority date | — |
| Expiry date | Apr 23, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
Abstract
A semiconductor storage element includes: a source region and a drain region provided in a semiconductor substrate; a tunnel insulating film provided on the semiconductor substrate between the source region and the drain region; a charge storage film provided on the tunnel insulating film; a block insulating film provided on the charge storage film; a gate electrode provided on the block insulating film; and a region containing a gas molecule, the region provided in a neighborhood of an interface between the charge storage film and the block insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.