MEMS structure having a stress inverter temperature-compensated resonator member
US7956517B1 · kind B1 · utility
12Cited by
19References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 4, 2008 |
| Grant date | Jun 7, 2011 |
| Priority date | — |
| Expiry date | Jul 28, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H2009/02503
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A MEMS structure having a temperature-compensated resonator member is described. The MEMS structure comprises an asymmetric stress inverter member coupled with a substrate. A resonator member is housed in the asymmetric stress inverter member and is suspended above the substrate. The asymmetric stress inverter member is used to alter the thermal coefficient of frequency of the resonator member by inducing a stress on the resonator member in response to a change in temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.