Patent · US Active

Semiconductor memory device capable of easily performing delay locking operation under high frequency system clock

US7956659B2 · kind B2 · utility

13Cited by
7References
10Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 29, 2006
Grant dateJun 7, 2011
Priority date
Expiry dateFeb 25, 2027

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH03K5/1565
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A semiconductor memory device includes a first clock buffer for outputting a first internal clock signal in response to an inverted signal of the system clock signal and for correcting a duty cycle ratio of the first internal clock signal in response to a control signal; a second clock buffer for outputting a second internal clock signal in response to the system clock signal and for correcting a duty cycle ratio of the second internal clock signal in response to the control signal; an analog duty cycle correction circuit for outputting the control signal corresponding to the duty cycle ratio of the first and second internal clock signals; a mixing circuit for mixing the first and second internal clock signals and for outputting a third internal clock signal whose duty cycle is corrected; and a DLL circuit for outputting a delay-locked clock signal by using the third internal clock signal.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.