Electron beam patterning
US7958464B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 28, 2008 |
| Grant date | Jun 7, 2011 |
| Priority date | — |
| Expiry date | Oct 27, 2029 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB82Y40/00
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method for creating an electron beam pattern exposure, where a pattern of shapes is generated, including at least one of lines and vias. To each shape there is assigned a set of exposure pixels and edge placement constraints. An intensity at each exposure pixel is calculated by using a simplex method, and a latent resist image location is calculated by convolving a proximity function with the pixel intensities. A shape critical dimension and a shape edge slope is statistically evaluated by applying linear regression on the locations of the calculated latent image. The electron beam pattern exposures are produced using dosages linearly optimized on a rotated pixel grid to produce the shape critical dimension and the shape edge slope.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.