Patent · US Active

Optical arrangement and EUV lithography device with at least one heated optical element, operating methods, and methods for cleaning as well as for providing an optical element

US7959310B2 · kind B2 · utility

1Cited by
2References
28Claims
0Family size

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Inventors

Key dates

Filing dateSep 13, 2007
Grant dateJun 14, 2011
Priority date
Expiry dateFeb 4, 2029

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG21K2201/067
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

An optical arrangement, in particular a projection system, illumination system or beam shaping system for EUV lithography, including at least one optical element that is arranged in a beam path of the optical arrangement and that reflects radiation in the soft X-ray- or EUV wavelength range, wherein at least during operation of the optical arrangement at least one of, preferably each of, the reflective optical elements in the beam path, at least at the optical surface, has an operating temperature of approximately 30° C. or more, preferably of approximately 100° C. or more, particularly preferably of approximately 150° C. or more, and even more preferably of approximately 250° C. or more, and wherein the optical design of the at least one reflective optical element is selected such that its optical characteristics are optimised for operation at the operating temperature. Also presented is a method for providing a reflective optical element with such an optical design.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.