Method and apparatus for reducing aspect ratio dependent etching in time division multiplexed etch processes
US7959819B2 · kind B2 · utility
1Cited by
19References
4Claims
0Family size
Inventors
Key dates
| Filing date | Jun 23, 2005 |
| Grant date | Jun 14, 2011 |
| Priority date | — |
| Expiry date | Jul 19, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/20
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method and an apparatus for reducing aspect ratio dependent etching that is observed when plasma etching deep trenches in a semiconductor substrate through an alternating deposition/etch process. A plurality of different sized features on the substrate are monitored in real time during the alternating deposition/etch process. Then, based on the information received from the monitor, at least one process parameter is adjusted in the alternating deposition/etch process to achieve equivalent etch depths of at least two different sized features on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.