Semiconductor device and manufacturing method therefor
US7960279B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 29, 2009 |
| Grant date | Jun 14, 2011 |
| Priority date | — |
| Expiry date | Dec 8, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/12044
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a semiconductor having a multilayer wiring structure device on a semiconductor substrate, the multilayer wiring structure includes an interlayer insulating film having at least an organic siloxane insulating film. The organic siloxane insulating film has a relative dielectric constant of 3.1 or less, a hardness of 2.7 GPa or more, and a ratio of carbon atoms to silicon atoms between 0.5 and 1.0, inclusive. Further, the multilayer wiring structure may include an insulating layer having a ratio of carbon atoms to silicon atoms not greater than 0.1, the insulating layer being formed on the top surface of the organic siloxane insulating film as a result of carbon leaving the organic siloxane insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.