Zinc oxide based compound semiconductor device
US7960727B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 21, 2006 |
| Grant date | Jun 14, 2011 |
| Priority date | — |
| Expiry date | Jun 20, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/817
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
There is provided a zinc oxide based compound semiconductor device which, even when a semiconductor device is formed by forming a lamination portion having a hetero junction of ZnO based compound semiconductor layers, does not cause any rise in a drive voltage while ensuring p-type doping, and, at the same time, can realize good crystallinity and excellent device characteristics. ZnO based compound semiconductor layers (2) to (6) are epitaxially grown on the principal plane of a substrate (1) made of MgxZn1-xO (0≦x<1). The principal plane of the substrate is a plane in which an A plane {11-20} or an M plane {10-10} is inclined in a direction of −c axis.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.