Devices containing permanent charge
US7960783B2 · kind B2 · utility
7Cited by
16References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 21, 2009 |
| Grant date | Jun 14, 2011 |
| Priority date | — |
| Expiry date | Dec 8, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An edge termination structure includes a final dielectric trench containing permanent charge. The final dielectric trench is surrounded by first conductivity type semiconductor material (doped by lateral outdiffusion from the trenches), which in turn is laterally surrounded by second conductivity type semiconductor material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.