Patent · US Active

eFuse with partial SiGe layer and design structure therefor

US7960809B2 · kind B2 · utility

8Cited by
17References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 16, 2009
Grant dateJun 14, 2011
Priority date
Expiry dateOct 29, 2029

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/0002
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A fuse includes a fuse link region, a first region and a second region. The fuse link region electrically connects the first region to the second region. A SiGe layer is disposed only in the fuse link region and the first region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.