Electrical test structure and method for characterization of deep trench sidewall reliability
US7960998B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 17, 2008 |
| Grant date | Jun 14, 2011 |
| Priority date | — |
| Expiry date | May 6, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A test structure and testing method are provided for characterizing the time-dependent drift in the parasitic PFET leakage current that flows along the sidewall of a deep trench isolation structure from the P-type active area to the P-type substrate in a semiconductor integrated circuit structure. The capacitive coupling characteristics of the deep trench isolation structure are used to control the electrical “bias” of the deep trench structure through the use of a large auxiliary trench mesh network that is formed as part of the deep trench structure. The trench mesh network can be placed adjacent to a Vdd ring or a ground ring and then, by using a ratioed capacitive voltage dividing network, the electrical potential at the trench can be controlled.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.