System and method for employing patterning process statistics for ground rules waivers and optimization
US7962865B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 17, 2008 |
| Grant date | Jun 14, 2011 |
| Priority date | — |
| Expiry date | Jul 14, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F30/39
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A system and method of employing patterning process statistics to evaluate layouts for intersect area analysis includes applying Optical Proximity Correction (OPC) to the layout, simulating images formed by the mask and applying patterning process variation distributions to influence and determine corrective actions taken to improve and optimize the rules for compliance by the layout. The process variation distributions are mapped to an intersect area distribution by creating a histogram based upon a plurality of processes for an intersect area. The intersect area is analyzed using the histogram to provide ground rule waivers and optimization.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.