Methods using block copolymer self-assembly for sub-lithographic patterning
US7964107B2 · kind B2 · utility
60Cited by
4References
76Claims
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Key dates
| Filing date | Feb 8, 2007 |
| Grant date | Jun 21, 2011 |
| Priority date | — |
| Expiry date | Apr 22, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/947
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Block copolymers can be self-assembled and used in methods as described herein for sub-lithographic patterning, for example. The block copolymers can be diblock copolymers, triblock copolymers, multiblock copolymers, or combinations thereof. Such methods can be useful for making devices that include, for example, sub-lithographic conductive lines.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.