Methods of forming a pattern of a semiconductor device
US7964332B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 19, 2008 |
| Grant date | Jun 21, 2011 |
| Priority date | — |
| Expiry date | Jun 23, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/128
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In polymers for an anti-reflective coating, compositions for an anti-reflective coating and methods of forming a pattern of a semiconductor device using the same, the compositions for an anti-reflective coating include a polymer that includes a first repeating unit having a basic side group, a second repeating unit having a light-absorbing group, and a third repeating unit having a cross-linkable group; a photoacid generator; a cross-linking agent; and a solvent. The polymer for the anti-reflective coating, which may have a basic side group chemically bound to a backbone of the polymer, may properly adjust diffusion of an acid in an anti-reflective coating layer to improve the profile of a pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.