Use of field oxidation to simplify chamber fabrication in microfluidic devices
US7964474B2 · kind B2 · utility
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19Claims
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Key dates
| Filing date | Apr 13, 2009 |
| Grant date | Jun 21, 2011 |
| Priority date | — |
| Expiry date | Jul 21, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01P2015/0828
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method includes growing a first oxide region concurrently with a second oxide region in a substrate and forming an inlet path to the first oxide region, the inlet path exposing a first surface of the first oxide region. The method also includes removing the first oxide region to form a chamber, forming a first MOS transistor adjacent the second oxide region, and forming a second MOS transistor separated from the first MOS transistor by the second oxide region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.