Phase change memory devices and methods for manufacturing the same

US7964862B2 · kind B2 · utility

Assignee

• Industrial Technology Research Institute · TW

Inventors

• Frederick Chen · Hsinchu, TW
• Yen Chuo · Hsinchu, TW
• Hong-Hui Hsu · Baoshan, TW
• Jyi-Tyan Yeh · Hsinchu, TW
• Ming-Jinn Tsai · Hsinchu, TW

Key dates

• Filing date: Mar 26, 2008
• Grant date: Jun 21, 2011
• Expiry date: Sep 5, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8828

Abstract

Phase change memory devices and methods for manufacturing the same are provided. An exemplary embodiment of a phase change memory device includes a first electrode disposed in a first dielectric layer. A second dielectric layer is disposed over the first dielectric layer and the first electrode. A phase change material layer disposed in the second dielectric layer to electrically contact the first electrode. A third dielectric layer is disposed over the second dielectric layer. A second electrode is disposed in the third dielectric layer to electrically connect the phase change material layer and at least one gap disposed in the first dielectric layer or the second dielectric layer to thereby isolate portions of the phase change material layer and portions of the first or second dielectric layer adjacent thereto.