Deposition of TiN films in a batch reactor
US7966969B2 · kind B2 · utility
10Cited by
114References
10Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 31, 2005 |
| Grant date | Jun 28, 2011 |
| Priority date | — |
| Expiry date | Apr 10, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28556
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Titanium nitride (TiN) films are formed in a batch reactor using titanium chloride (TiCl4) and ammonia (NH3) as precursors. The TiCl4 is flowed into the reactor in temporally separated pulses. The NH3 can also be flowed into the reactor in temporally spaced pulses which alternate with the TiCl4 pulses, or the NH3 can be flowed continuously into the reactor while the TiCl4 is introduced in pulses. The resulting TiN films exhibit low resistivity and good uniformity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.