Compositions and processes for immersion lithography
US7968268B2 · kind B2 · utility
22Cited by
6References
17Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 1, 2006 |
| Grant date | Jun 28, 2011 |
| Priority date | — |
| Expiry date | Feb 17, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0758
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials that can be substantially non-mixable with a resin component of the resist. Further preferred photoresist compositions of the invention comprise 1) Si substitution, 2) fluorine substitution; 3) hyperbranched polymers; and/or 4) polymeric particles. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.