High voltage GaN-based transistor structure

US7968391B1 · kind B1 · utility

Assignee

• RF Micro Devices, Inc. · US

Inventors

• Joseph A. Smart · Mooresville, US
• Brook Hosse · Huntersville, US
• Shawn R. Gibb · Huntersville, US
• David Grider · Huntersville, US
• Jeffrey B. Shealy · Thousand Oaks, US

Key dates

• Filing date: Nov 8, 2007
• Grant date: Jun 28, 2011
• Expiry date: Dec 18, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8503

Abstract

A high voltage and high power gallium nitride (GaN) transistor structure is disclosed. A plurality of structural epitaxial layers including a GaN buffer layer is deposited on a substrate. A GaN termination layer is deposited on the plurality of structural epitaxial layers. The GaN termination layer is adapted to protect the plurality of structural epitaxial layers from surface reactions. The GaN termination layer is sufficiently thin to allow electrons to tunnel through the GaN termination layer. Electrical contacts are deposited on the GaN termination layer, thereby forming a high electron mobility transistor.