Method for producing a floating gate with an alternation of lines of first and second materials

US7968398B2 · kind B2 · utility

Assignees

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR
• CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE · FR
• UNIVERSITÉ JOSEPH FOURIER · FR

Inventors

• Gabriel Molas · Grenoble, FR
• Karim Aissou · Meylan, FR
• Thierry Baron · Pessac, FR

Key dates

• Filing date: Jan 22, 2009
• Grant date: Jun 28, 2011
• Expiry date: Feb 18, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/037

Abstract

A diblock copolymer layer comprising at least two polymers and having a lamellar structure perpendicularly to a substrate is deposited on a first gate insulator formed on the substrate. One of the polymers of the diblock copolymer layer is then eliminated to form parallel grooves in the copolymer layer. The grooves are filled by a first metallic or semi-conductor material and the rest of the copolymer layer is eliminated. A second dielectric material is deposited to form a second gate insulator. The second gate insulator of the floating gate then comprises an alternation of parallel first and second lines respectively of the first and second materials, the second material encapsulating the lines of the first material.