Methods of manufacturing semiconductor memory devices

US7968407B2 · kind B2 · utility

Assignee

• SAMSUNG ELECTRONICS CO., LTD. · KR

Inventor

• Albert Fayrushin · Seojong-myeon, KR

Key dates

• Filing date: Apr 1, 2010
• Grant date: Jun 28, 2011
• Expiry date: Apr 1, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/69

Abstract

A method of manufacturing a semiconductor memory device, the method including forming a tunnel insulation layer on a substrate, forming a preliminary charge trapping layer on the tunnel insulation layer, forming an etch stop layer on the preliminary charge trapping layer, wherein a portion of the preliminary charge trapping layer is not covered by the etch stop layer, removing the exposed portion of the preliminary charge trapping layer to form a charge trapping layer having a uniform thickness, forming a dielectric layer on the charge trapping layer, and forming a gate electrode on the dielectric layer.