Apparatus and method for isolating integrated circuit components using deep trench isolation and shallow trench isolation
US7968418B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 10, 2007 |
| Grant date | Jun 28, 2011 |
| Priority date | — |
| Expiry date | Jul 5, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76232
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An isolation trench structure includes both a deep trench isolation (DTI) trench and a shallow trench isolation (STI) trench. The DTI trench can be formed by etching a deeper, narrower trench in a substrate and filling the deeper trench with one or more materials (such as an oxide). The STI trench can be formed by etching a shallower, wider trench in the substrate and filling the shallower trench with one or more materials (such as an oxide). The STI trench surrounds a portion of the DTI trench, such as by completely encircling an upper portion of the DTI trench. The DTI and STI trenches are filled during different operations, and the DTI and STI trenches can be filled with the same material(s) or with different material(s).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.