Method for forming trench isolation using a gas cluster ion beam growth process
US7968422B2 · kind B2 · utility
17Cited by
11References
19Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 9, 2009 |
| Grant date | Jun 28, 2011 |
| Priority date | — |
| Expiry date | Feb 9, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02247
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming shallow trench isolation on a substrate using a gas cluster ion beam (GCIB) is described. The method comprises generating a GCIB, and irradiating the substrate with the GCIB to form a shallow trench isolation structure by growing a dielectric layer in at least one region on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.