Method of implantation
US7968424B2 · kind B2 · utility
7Cited by
5References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 16, 2009 |
| Grant date | Jun 28, 2011 |
| Priority date | — |
| Expiry date | Jan 16, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/807
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a method of implanting dopant ions to an integrated circuit. The method includes forming a first pixel and a second pixel in a substrate, forming an etch stop layer over the substrate, forming a hard mask layer over the etch stop layer, patterning the hard mask layer to include an opening between the first pixel and the second pixel, and implanting a plurality of dopants through the opening to form an isolation feature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.