Wen-De Wang
83Patents
9h-index
38Co-inventors
74Inventor score
Filing activity: Oct 15, 2004 → Jul 28, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7078779B2 | Enhanced color image sensor device and method of making the same | Electricity | 46 | Expired |
| US9142586B2 | Pad design for backside illuminated image sensor | Electricity | 37 | Active |
| US8435824B2 | Backside illumination sensor having a bonding pad structure and method of making the same | Electricity | 17 | Active |
| US7935994B2 | Light shield for CMOS imager | Electricity | 15 | Expired |
| US8461021B2 | Multiple seal ring structure | Electricity | 13 | Active |
| US8604405B2 | Backside illuminated image sensor device with refractive index dependent layer thicknesses and method of forming the same | Electricity | 12 | Active |
| US8531565B2 | Front side implanted guard ring structure for backside illuminated image sensor | Electricity | 11 | Active |
| US8405182B2 | Back side illuminated image sensor with improved stress immunity | Electricity | 10 | Active |
| US8709854B2 | Backside structure and methods for BSI image sensors | Emerging Cross-Sectional Technologies | 9 | Active |
| US8338917B2 | Multiple seal ring structure | Electricity | 8 | Active |
| US9035445B2 | Seal ring structure with a metal pad | Electricity | 8 | Active |
| US7968424B2 | Method of implantation | Electricity | 7 | Active |
| US9123615B2 | Vertically integrated image sensor chips and methods for forming the same | Electricity | 7 | Active |
| US8164124B2 | Photodiode with multi-epi films for image sensor | Electricity | 7 | Active |
| US9165970B2 | Back side illuminated image sensor having isolated bonding pads | Electricity | 6 | Active |
| US9013022B2 | Pad structure including glue layer and non-low-k dielectric layer in BSI image sensor chips | Electricity | 6 | Active |
| US9806119B2 | 3DIC seal ring structure and methods of forming same | Electricity | 6 | Active |
| US8981510B2 | Ridge structure for back side illuminated image sensor | Electricity | 6 | Active |
| US8227288B2 | Image sensor and method of fabricating same | Electricity | 5 | Active |
| US8969991B2 | Backside structure and methods for BSI image sensors | Emerging Cross-Sectional Technologies | 5 | Active |
| US8283754B2 | Seal ring structure with metal pad | Electricity | 5 | Active |
| US9455288B2 | Image sensor structure to reduce cross-talk and improve quantum efficiency | Electricity | 4 | Active |
| US8383440B2 | Light shield for CMOS imager | Electricity | 4 | Active |
| US8569807B2 | Backside illuminated image sensor having capacitor on pixel region | Electricity | 4 | Active |
| US8502389B2 | CMOS image sensor and method for forming the same | Electricity | 4 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.