Semiconductor device manufacturing method and substrate processing apparatus
US7968437B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 10, 2006 |
| Grant date | Jun 28, 2011 |
| Priority date | — |
| Expiry date | Apr 2, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28562
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Productivity and product yield, as well as the step coverage and the adhesion are improved. A film forming process includes an initial film forming step, and a main film forming step. In the initial film forming step, a step of supplying a material gas into a processing chamber to adsorb the material gas on the substrate, and a step of supplying a first reaction gas not containing oxygen atoms into the processing chamber to cause a reaction with the material gas adsorbed on the substrate in order to from a thin film on the substrate, are repeated multiple cycles to form the thin film with the specified thickness on the substrate. In the main film forming step, a step of supplying a material gas into the processing chamber to adsorb the material gas on the substrate, and a step of supplying a second reaction gas containing oxygen atoms into the processing chamber to cause a reaction with the material gas adsorbed on the substrate in order to form a thin film on the substrate, are repeated multiple cycles, to form the thin film with a specified thickness on the thin film that was formed on the substrate in the initial film forming step.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.