Method of forming pattern structure
US7968454B2 · kind B2 · utility
1Cited by
0References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 15, 2010 |
| Grant date | Jun 28, 2011 |
| Priority date | — |
| Expiry date | Jan 15, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B41/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a pattern structure includes forming a thin film pattern on a substrate, the thin film pattern including depression portions with first bottom widths, forming a protection layer on the thin film pattern by implanting ions into the thin film pattern, and etching a lower portion of the thin film pattern selectively using the protection layer as a mask to increase the first bottom widths of the depression portions into second bottom widths.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.