Copper deposition for filling features in manufacture of microelectronic devices
US7968455B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 17, 2007 |
| Grant date | Jun 28, 2011 |
| Priority date | — |
| Expiry date | Oct 17, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76879
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for plating copper onto a semiconductor integrated circuit device substrate by forming an initial metal deposit in the feature which has a profile comprising metal on the bottom of the feature and a segment of the sidewalls having essentially no metal thereon, electrolessly depositing copper onto the initial metal deposit to fill the feature with copper. A method for plating copper onto a semiconductor integrated circuit device substrate by forming a deposit comprising a copper wettable metal in the feature, forming a copper-based deposit on the top-field surface, and depositing copper onto the deposit comprising the copper wettable metal to fill the feature with copper.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.