Boron aluminum nitride diamond heterostructure
US7968865B2 · kind B2 · utility
20Cited by
3References
6Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 6, 2009 |
| Grant date | Jun 28, 2011 |
| Priority date | — |
| Expiry date | Jul 6, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/871
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A heterostructure having a heterojunction comprising: a diamond layer; and a boron aluminum nitride (B(x)Al(1-x)N) layer disposed in contact with a surface of the diamond layer, where x is between 0 and 1.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.