ZnO-containing semiconductor layer and ZnO-containing semiconductor light emitting device
US7968905B2 · kind B2 · utility
0Cited by
2References
16Claims
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Key dates
| Filing date | Jul 1, 2008 |
| Grant date | Jun 28, 2011 |
| Priority date | — |
| Expiry date | Jan 28, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8232
Abstract
A ZnO-containing semiconductor layer contains Se or S added to ZnO and has an emission peak wavelength of ultraviolet light and an emission peak wavelength of visual light. By combining the ZnO-containing semiconductor layer with phosphor or semiconductor which is excited by the emitted ultraviolet light and emits visual light, visual light at various wavelengths can be emitted.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.