Quasi-vertical gated NPN-PNP ESD protection device
US7968936B2 · kind B2 · utility
15Cited by
1References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 31, 2007 |
| Grant date | Jun 28, 2011 |
| Priority date | — |
| Expiry date | May 16, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/127
Abstract
Fashioning a quasi-vertical gated NPN-PNP (QVGNP) electrostatic discharge (ESD) protection device is disclosed. The QVGNP ESD protection device has a well having one conductivity type formed adjacent to a deep well having another conductivity type. The device has a desired holding voltage and a substantially homogenous current flow, and is thus highly robust. The device can be fashioned in a cost effective manner by being formed during a BiCMOS or Smart Power fabrication process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.