Microelectronic device provided with transistors coated with a piezoelectric layer

US7968945B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Jerome Lolivier · Yermenonville, FR
• Maud Vinet · Voiron, FR
• Thierry Poiroux · Voiron, FR

Key dates

• Filing date: Jun 21, 2006
• Grant date: Jun 28, 2011
• Expiry date: May 25, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/689

Abstract

An improved microelectronic device, and method for making such a microelectronic device. The device includes one or plural transistors and piezoelectric mechanisms, with an arrangement capable of applying a variable mechanical strain on transistor channels.