Patent · US Active

Power semiconductor module having a thermally conductive base plate on which at least four substrates are arranged in at least one single row

US7968988B2 · kind B2 · utility

1Cited by

3References

17Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Thomas Nuebel · Warstein, DE
Oliver Schilling · Warstein, DE
Reinhold Spanke · Bestwig, DE

Key dates

Filing date	Mar 1, 2007
Grant date	Jun 28, 2011
Priority date	—
Expiry date	Jul 6, 2028

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The power semiconductor module (1) has a heat-conducting base plate (11) on which at least three substrates (2, 3, 4, 5, 6, 7) are placed, each substrate supporting at least one power semiconductor component (8, 9) that gives off heat generated during operation. In order to optimize a power semiconductor module of this type with regard to mechanical load and heat dissipation, the substrates (2, 3, 4, 5, 6, 7) are placed on the base plate (11) while being arranged in a single row (12), and pressing devices (15, 16), which are situated close to the substrate, are provided on both longitudinal sides (11a, 11b) of the base plate (11) while being arranged parallel to the row (12). The base plate can be pressed against a cooling surface by the pressing devices.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.