Patent · US Active

Device having thin black mask and method of fabricating the same

US7969638B2 · kind B2 · utility

6Cited by

165References

9Claims

0Family size

Assignee

QUALCOMM MEMS Technologies, Inc. · US

Inventors

Gang Xu · Beijing, CN
Chun-Ming Wang · Fremont, US
Fan Zhong · Lo Wu, CN
QI-YAN LUO · Nanhu, CN

Key dates

Filing date	Apr 10, 2008
Grant date	Jun 28, 2011
Priority date	—
Expiry date	Aug 10, 2028

Classification

Technology area (CPC G)Physics
CPC primaryG02B26/001
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A thin black mask is created using a single mask process. A dielectric layer is deposited over a substrate. An absorber layer is deposited over the dielectric layer and a reflector layer is deposited over the absorber layer. The absorber layer and the reflector layer are patterned using a single mask process.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.