Wafer bonding material with embedded conductive particles
US7972683B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 5, 2007 |
| Grant date | Jul 5, 2011 |
| Priority date | — |
| Expiry date | Jul 4, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24909
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A material for bonding a first wafer to a second wafer, which includes an insulating adhesive with conductive particles embedded in the adhesive substance. When the adhesive is applied and melted or fused, and pressure is applied between the first wafer and the second wafer, the first wafer approaches the second wafer until a minimum separation is reached, defined by a dimension of the conductive particles. Each of the first wafer and the second wafer may have circuitry formed thereon, and the conductive particles may form a conductive path between the circuitry on one wafer and the circuitry on the other wafer. Advantageously, the high fusing temperature required by the insulating adhesive may also serve to activate a getter material, formed in the device cavity between the first wafer and the second wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.