Methods for manufacturing MEMS sensor and thin film and cantilever beam thereof with epitaxial growth process
US7972888B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 10, 2010 |
| Grant date | Jul 5, 2011 |
| Priority date | — |
| Expiry date | Jun 10, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01P2015/0828
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method for manufacturing a MEMS sensor and its thin film and cantilever beam includes steps of etching a top surface of a single-crystal silicon wafer in combination of a deposition process, an outer epitaxial growth process, a wet etching process and a back etching process in order to form a pressure-sensitive single-crystal silicon film, a cantilever beam, a mass block, a front chamber, a back chamber and trenches connecting the front and the back chambers. The single-crystal silicon film is prevented from etching so that the thickness thereof can be well controlled. The method of the present invention can be used to replace the traditional method which forms the back chamber and the pressure-sensitive single-crystal silicon film from the bottom surface of the silicon wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.