Patent · US Active

Method for forming metallic materials comprising semi-conductors

US7972911B1 · kind B1 · utility

2Cited by

2References

7Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Veronique Carron · Le Pont-de-Claix, FR
Fabrice Nemouchi · Moirans, FR

Key dates

Filing date	Dec 10, 2010
Grant date	Jul 5, 2011
Priority date	—
Expiry date	Dec 10, 2030

Classification

Technology area (CPC H)Electricity
CPC primaryH10D84/038
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The method for forming first and second metal-based materials comprises providing a substrate comprising an area made from a first semi-conductor material and an area made from a second semi-conductor material comprising germanium separated by a pattern made from dielectric material, depositing a metal layer and performing a first heat treatment in an atmosphere comprising a quantity of oxygen comprised between 0.01% and 5%. The metal layer reacts with the first semi-conductor material and the second semi-conductor material comprising germanium to respectively form the first metal-based material and the second metal-based material containing germanium.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.