Patent · US Active

Method of fabrication of heterogeneous integrated circuits and devices thereof

US7972936B1 · kind B1 · utility

7Cited by
2References
24Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 3, 2009
Grant dateJul 5, 2011
Priority date
Expiry dateOct 22, 2029

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D84/05
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A heterogeneous integrated circuit and method of making the same. An integrated circuit includes a surrogate substrate including a material selected from the group consisting of Group II, Group III, Group IV, Group V, and Group VI materials and their combinations; at least one active semiconductor device including a material combination selected from the group consisting of Group IV-IV, Group III-V and Group II-VI materials; and at least one transferred semiconductor device including a material combination selected from the group consisting of Group IV-IV, Group III-V and Group II-VI materials. The at least one active semiconductor device and the at least one transferred device are interconnected.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.