Method for fabricating a semiconductor element, and semiconductor element
US7972947B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | May 13, 2008 |
| Grant date | Jul 5, 2011 |
| Priority date | — |
| Expiry date | Aug 7, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method for fabricating a semiconductor element in a substrate, first implantation ions are implanted into the substrate, whereby micro-cavities are produced in a first partial region of the substrate. Furthermore, pre-amorphization ions are implanted into the substrate, whereby a second partial region of the substrate is at least partly amorphized, and whereby crystal defects are produced in the substrate. Furthermore, second implantation ions are implanted into the second partial region of the substrate. Furthermore, the substrate is heated, such that at least some of the crystal defects are eliminated using the second implantation ions. Furthermore, dopant atoms are implanted into the second partial region of the substrate, wherein the semiconductor element is formed using the dopant atoms.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.