Method for forming a dielectric film and novel precursors for implementing said method
US7972975B2 · kind B2 · utility
5Cited by
3References
4Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 21, 2006 |
| Grant date | Jul 5, 2011 |
| Priority date | — |
| Expiry date | Dec 16, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02282
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention relates to dielectric layers with a low dielectric constant, said layers being used to separate metallic interconnections especially during the production of integrated circuit boards (in the BEOL part of the circuit). According to the invention, the dielectric layer comprises SiC and/or SiOC, and is obtained from at least one precursor comprising at least one —Si—C<SUB>n</SUB>—Si chain where n=1.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.