Implantation quality improvement by xenon/hydrogen dilution gas
US7973293B2 · kind B2 · utility
6Cited by
1References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 1, 2009 |
| Grant date | Jul 5, 2011 |
| Priority date | — |
| Expiry date | Oct 22, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/2658
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method comprises supplying a dopant gas in an arc chamber of an ion source. A dilutant is supplied to dilute the dopant gas. The dilutant comprises about 98.5 wt. % xenon and about 1.5 wt. % hydrogen. An ion beam is generated from the diluted dopant gas using the ion source.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.