Lateral DMOS transistor and method for the production thereof

US7973333B2 · kind B2 · utility

Assignee

• Telefunken Semiconductors GmbH & Co. KG · DE

Inventors

• Franz Dietz · Heilbronn, DE
• Volker Dudek · Ditzingen, DE
• Thomas Hoffmann · Leuven, BE
• Michael Graf · Leutenbach, DE
• Stefan Schwantes · Heilbronn, DE

Key dates

• Filing date: Apr 2, 2007
• Grant date: Jul 5, 2011
• Expiry date: Oct 20, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/516

Abstract

A lateral DMOS-transistor is provided that includes a MOS-diode made of a semi-conductor material of a first type of conductivity, a source-area of a second type of conductivity and a drain-area of a second type of conductivity which is separated from the MOS-diode by a drift region made of a semi-conductor material of a second type of conductivity which is at least partially covered by a dielectric gate layer which also covers the semi-conductor material of the MOS-diode. The dielectric gate-layer comprises a first region of a first thickness and a second region of a second thickness. The first region covers the semi-conductor material of the MOS-diode and the second region is arranged on the drift region. A transition takes place from the first thickness to the second thickness such that an edge area of the drift region which is oriented towards the MOS-diode is arranged below the second area of the gate layer. The invention also relates to a method for the production of these types of DMOS-transistors.