Method of cleaning a patterning device, method of depositing a layer system on a substrate, system for cleaning a patterning device, and coating system for depositing a layer system on a substrate

US7973345B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Uwe Hoffmann · Leverkusen, DE
• Jose Manuel DIEGUEZ-CAMPO · Hanau, DE

Key dates

• Filing date: Apr 24, 2008
• Grant date: Jul 5, 2011
• Expiry date: Mar 13, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10K71/166
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A method of cleaning a patterning device, the patterning device having at least organic coating material (OLED material) deposited thereon, where the method includes the step of providing a cleaning plasma for removing the coating material from the patterning device by means of a plasma etching process. During the step of removing the coating material from the patterning device, the temperature of the patterning device does not exceed a critical temperature causing damage to the patterning device, while maintaining a plasma etching rate of at least 0.2 μm/min. In order to generate a pulsed cleaning plasma, pulsed energy is provided. The method can be carried out in a direct plasma etching process or in a remote plasma etching process. Different etching processes may be combined or carried out subsequently.