Semiconductor component and method for producing it

US7973362B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Armin Willmeroth · Friedberg, DE
• Michael Rueb · Faak am See, AT
• Carolin Tolksdorf · Ebersberg, DE
• Markus Schmitt · Neubiberg, DE

Key dates

• Filing date: Oct 3, 2007
• Grant date: Jul 5, 2011
• Expiry date: Oct 4, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/111

Abstract

A semiconductor component includes a semiconductor body having an edge with an edge zone of a first conductivity type. Charge compensation regions of a second conductivity type are embedded into the edge zone, with the charge compensation regions extending from a top side of the semiconductor component vertically into the semiconductor body. For the number Ns of charge carriers present in a volume Vs between two charge compensation regions that are adjacent in a direction perpendicular to the edge, and for the number Np of charge carriers present in a volume Vp between two charge compensation regions that are adjacent in a direction parallel to the edge, Np>Ns holds true.