Modifier for low dielectric constant film, and method for production thereof
US7973390B2 · kind B2 · utility
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7Claims
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Key dates
| Filing date | Jul 11, 2007 |
| Grant date | Jul 5, 2011 |
| Priority date | — |
| Expiry date | Sep 21, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A modifier for lowering relative dielectric constant of a low dielectric constant film used in semiconductor devices, the modifier of the low dielectric constant film being characterized in that it contains as an effective component a silicon compound represented by formula (1)R3-nHnSiN3 (1)in which R is a C1-C4 alkyl group, and n is an integer from 0 to 3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.