Plasma processing apparatus and method of suppressing abnormal discharge therein
US7974067B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 1, 2006 |
| Grant date | Jul 5, 2011 |
| Priority date | — |
| Expiry date | Oct 8, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/0206
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a plasma processing apparatus having an electrostatic chuck for holding a semiconductor wafer by an electrostatic adsorption force and a DC power supply for applying an electrostatic adsorption voltage to the electrostatic chuck, abnormal discharge in plasma is suppressed by providing the apparatus with a signal detector that detects a foresee signal that foresees occurrence of abnormal discharge in plasma, and a controller that controls ESC leakage current based upon the foresee signal. If the foresee signal is outside a prescribed range, control is exercised so as to reduce the absolute value of the electrostatic adsorption voltage, thereby suppressing the occurrence of an abnormal discharge.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.